Biography: Prof. Anlian Pan is the Vice President of Hunan Normal University and the Director of the Hunan Institute of Optoelectronic Integration. He has received funding for the National Natural Science Foundation Innovative Research Group Project, the National Distinguished Young Scholars, and the Ministry of Science and Technology’s Major Research Program. He has published over 400 papers in renowned international journals such as Science, Nature Nanotechnology, Nature Electronics, and Nature Materials and has been granted more than 40 invention patents. He was awarded the National Nature Science Award (2nd class) in 2019, the Hunan Province Natural Science Award (1st Prize) in 2010 and 2017, the Hunan Province Innovation Team Award in 2022, the Hunan Innovation Team Award in 2022, the Winner of the Disruptive Technology Competition in 2022, and the Gold Medal at the China Invention Exhibition in 2024.

Abstract: The rapid development of digital internet technology has driven continuous transformation and upgrading of display technology. The advent of the Metaverse era demands higher standards for display technology in terms of energy efficiency, brightness, reliability, and wearability, aiming to achieve a seamless and natural digital display experience. Micro-LED is a revolutionary new display technology that can meet the significant demands of next-generation smart displays for high pixel density and high brightness light-emitting devices.

This report will mainly introduce our major research progress in the micro display field. We have developed processes such as sidewall passivation and surface nanopatterning to overcome the construction bottleneck of small-sized light-emitting devices. By optimizing carrier injection, transport, and recombination behaviors, we have achieved ultra-small (1.5 micrometers), high-efficiency vertically structured silicon-based micro light-emitting device arrays. We have also developed a three-dimensional stacked monolithic integration process (VSP), successfully applying silicon-based semiconductor integrated circuit processes to the development of micro light-emitting display chips. We have developed the world’s smallest (grain-sized) micro display screen driven by a single point CMOS, with a pixel density of up to 10,000 PPI and brightness exceeding 1 million nits. These related achievements have been promoted and applied by companies such as TCL Thunderbird.

Biography:Kang Yongyin is a researcher of Yiwu Research Institute of Fudan University and director of the Photoelectric Materials and Devices Laboratory. Graduated from Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences in 2010, and graduated from the postdoctoral mobile station of Zhejiang University in 2017. Since 2010, he has been working in Najing Technology Co., Ltd., as a technical director / senior engineer.

In June 2023, he joined the Yiwu Research Institute of Fudan University and established the Photoelectric Materials and Devices Laboratory.

Abstract:The 2023 Nobel Prize in Chemistry was awarded to Bawendi, Brus and Ekimov for their outstanding contributions to the "discovery and synthesis of quantum dots". And quantum dot technology has taken the lead in display industry application, from quantum dot glass tube to quantum dot light conversion film and quantum dot diffusion plate, quantum dot backlight with liquid crystal brought color gamut promotion and excellent quality experience. And a new generation of quantum dot pixel level application QD OLED products also launched by Samsung Display and widely praised, QD µLED and QD EL application also received the attention of academia and industry and pursuit, the broad application prospects and challenges of quantum dot were introduced in this report.

Biography:
Tripole Optoelectronic Technology (Suzhou) Co., Ltd   CEO

Jinan University graduate collaborative training base   Extramural Supervisor;

Senior substantive expert on holographic diffractive optics

PROJECT EXPERIENCE

Yuan has applied for more than 30 national patents, and has rich experience in the design, manufacturing and mass production process of holographic optical components.

1. Leading the development of opto-mechanical systems with special holographic optical components, and the performance of various products has been professionally tested at the top level in China.

2. Lead the development of the waveguide simulation design tool "Wade" and the research and development project of high-performance holographic waveguide helmet display. 

3. Lead the development project of large-area holographic diffractive optical waveguide and the development of large-angle retinal holographic optical elements.

Abstract:Holographic diffractive optics belongs to the broad field of semiconductors and is an interdisciplinary fundamental science that encompasses holographic photolithography materials, non-sequential vector subwavelength device software and design, holographic interference light field modulation, and processes. It has a wide range of applications in areas such as holographic display, holographic storage, measurement, testing, reference positioning, scanning, targeting, and security and encryption. These applications span various multi-billion, multi-trillion-dollar industries, including advanced semiconductor photolithography machines, aviation, missile guidance and tracking, soldier combat, automotive, AR metaverse, consumer electronics, and biomedical instruments.It has attracted increasing attention from industries in recent years. This report elaborates on holographic diffractive optics in terms of materials, simulation and design, fabrication processes, and market applications.

Biography:Xia Wei, Professor and doctoral supervisor at the University of Jinan, technical advisor at Shandong Huaguang Optoelectronics Co., Ltd., director of the Shandong Provincial Semiconductor Laser Technology Innovation Center. He specializes in compound semiconductor laser chips, devices, and applications. Professor Xia has led over twenty major projects, including the National Key R&D Program and the National "863 Program." His accolades include multiple Shandong Provincial Science and Technology Progress Awards, the Shandong Provincial Technological Invention Award, and the China Invention Association’s Invention and Innovation Award. He has been recognized as the Outstanding Young and Middle-aged Expert in Shandong Province, the Outstanding Scientific and Technological Worker by the Chinese Institute of Electronics, the Qilu Industry Craftsman, and the Top Technical Talent of Jinan.

Abstract:The 640-670nm semiconductor laser chips are known for their compact size, reliability, and high electro-optical conversion efficiency, making them ideal for laser display and projection applications. To achieve a higher color gamut, the industry relies on 640nm wavelength semiconductor lasers as the core of RGB synthetic laser sources, creating an urgent demand for high-power red semiconductor laser chips.

Through low-loss compound epitaxial layer growth and optimized chip design, we have improved the efficiency and output power of 640nm high-power semiconductor laser chips. Using high-quality AlGaInP heterojunction MOCVD epitaxial growth technology, we achieved a maximum output power of over 4W per single chip and an electro-optical conversion efficiency of 38%. The lasers demonstrated stable operation for 1000 hours at a shell temperature of 40℃ without power degradation, meeting the demands of laser projection, display, and measurement. Additionally, we developed a long-lifetime 670nm-10mW base transverse mode laser chip reliable in high-temperature environments up to 85℃. The chip showed continuous operation for 5040 hours with less than 15% average power decline, meeting the high-reliability requirements for laser measurement, sensing, projection, and lighting applications.

Biography:Dr. Zhijian Lv received his B.S. degree in telecommunications from Huazhong University of Science and Technology in 2011, M.S. degree and Ph.D. degree in Electrical Engineering from Arizona State University in 2014 and in 2017, respectively. He worked at Analog Devices Inc on high-voltage automobile and industrial PMICs design from 2017 to 2018. He was a research assistant professor of Electrical and Electronic Engineering at Southern University of Science and Technology, where he joined the faculty on April 2019. Meanwhile, he joined Shenzhen Sitan Technology CO., LTD. as a design manager for AR/VR Micro-LED display. Since September 2021, Dr. Zhijian Lv is currently a deputy director in Sino-German Intelligent Manufacture College at Shenzhen Technology University.

Dr. Zhijian Lv’s research interests are in the area of circuits and systems, communications systems, and ICs. His current research projects involve Micro-LED and LCoS display drive ICs and system, PMICs, LDO, and DC/AC inverter. He has published 45 journal papers and 46 patents with a total citation over 1300.

Abstract:AR/VR is an important human-computer interaction platform for the metaverse, and optical components and micro displays are key to image quality. As two key technologies for micro displays, the report will offer a brief introduction to the structure, manufacturing process, silicon-based driving method, progress, and challenges in the areas of silicon-based Micro-LED and silicon-based liquid crystal on silicon (LCoS) micro displays. In the section of silicon-based driving circuits and ICs, the report will emphasize the driving design and challenges from the perspective of the latest projects. Finally, the report will discuss the hot topics and future trends of Micro-LED and LCoS silicon-based driving circuits and chips.

Biography:1. Served as the company’s Director of R&D, led the planning, equipment evaluation and construction of the company’s Micro-LED pilot production line.

2. Led the company’s Micro-LED TFT backplane, mass transfer, detection, repair, encapsulation and module technology planning and landing.

3. Applied for 59 patents.

Abstract:Introduce the development of Micro-LED display technology industry and the progress of Vistar. A solution to the bottleneck of mass transfer technique in Micro-LED display technology is presented. The application of laser-assisted bonding technique in Micro-LED display is introduced in detail, and its effectiveness in achieving high productivity and low cost bonding is demonstrated. Meanwhile, the development of TFT-based Micro-LED display project of Vistar is introduced.

Biography:Prof. Chen Linsen has been engaged in the research and applications of micro-nano optics and flexible manufacturing for more than thirty-years, and is the founder of SVG TechGroup. His research achievements in the digital lithographic technologies, R2R nanoimprinting systems, optical security, micro-materials and devices are widely applied in novel display and semiconductive industries domestically and abroad. As the host, he has won the National Science and Technology Progress Award three times and the China Patent Excellence Awards. He was awarded the title of "Contemporary Inventor" and the 4th "Outstanding Engineer Award", and has authorized more than 200 patents and published more than 190 papers in the related fields. His project in the novel display has approved as National Key R&D Program of China.

Biography:Prof. Lei Liao is currently a Professor in College of Semiconductors (College of Integrated Circuits), Hunan University, China. He obtained his B.S. in physics in 2004 and Ph.D. in physics in 2009 at Wuhan University. He joined the School of Physics at Wuhan University in 2011 as a Professor after postdoctoral research at University of California, Los Angeles. Prof. Liao has carried out the studies on the heterogeneous integration and device architecture based on 2D semiconductors and metal oxide thin film transistors. So far, he has published more than 200 papers in SCI journals, including Nature, Nature Nano., Nature Electron., Nature Commun., Nano Lett., and Adv. Mater., and so on. Meanwhile, all these papers have been cited more than 20000 times by others, and the corresponding H factor is 81. He has been appointed as editors or editorial board members of IEEE TED, Frontier of Physics, Journal of Semiconductor, and Chinese Physics Letters. His awards include the First Prize of Science and Technology Award of Hunan Province and Ministry of Education, etc.

Abstract:Metal oxide semiconductor (MOS)-based complementary thin-film transistor (TFT) circuits have broad application prospects in large-scale flexible electronics. To simplify circuit design and increase integration density, basic complementary circuits require both p- and n-channel transistors based on an individual semiconductor. However, until now, no MOSs that can simultaneously show p- and n-type conduction behavior has been reported. Herein, we demonstrate for the first time that Cu-doped SnO (Cu:SnO) with HfO₂ capping can be employed for high performance p- and n-channel TFTs. The interstitial Cu+ can induce an n-doping effect while restraining electron−electron scatterings by removing conduction band minimum degeneracy. As a result, the Cu_3atom%:SnO TFTs exhibit a record high electron mobility of 43.8 cm² V⁻¹ s⁻¹. Meanwhile, the p-channel devices show an ultrahigh hole mobility of 2.4 cm² V⁻¹ s⁻¹. Flexible complementary logics are then established, including an inverter, NAND gates, and NOR gates. Impressively, the inverter exhibits an ultrahigh gain of 302.4 and excellent operational stability and bending reliability.