Lars Samuelson
(Member of the Royal Swedish Academy of Sciences, Member of the Royal Swedish Academy of Engineering Sciences, Foreign member of the Chinese Academy of Sciences, Chair Professor of Southern University of Science and Technology, Shenzhen, Director of Institute of Nanoscience and Applications)
Nanoscience from basic materials physics to real-world opto-electronics applications
Biography:Lars Samuelson received his PhD in physics in 1977 in the field of experimental and theoretical studies of electron-phonon coupling for deep levels in semiconductors, followed by a post-doc at IBM San José Research Centre in California, there active in the fields of display technology and band structure calculations. In 1981 he became associate professor of physics at Lund University and in 1986 professor of semiconductor physics at Chalmers/University of Gothenburg. In 1988, he returned to a professorship in semiconductor electronics at the Department of Physics at Lund University, when he initiated the interdisciplinary research center Nanometer Structure Consortium, later called NanoLund, which today engages more than 400 researchers. Since 2021, he is employed as Chair Professor at the Southern University of Science and Technology (SUSTech), in Shenzhen, China, and as the leader of the Institute of Nanoscience and Applications (INA).In 2004 he became a Fellow at the Institute of Physics, UK (FinstP), at the American Physical Society (APS, Materials Physics) in 2009 and in 2020 he became a Fellow International at the Japanese Society for Applied Physics (JSAP). He became a member of the Royal Physiographic Society in 1998, of KVA, the Royal Swedish Academy of Sciences (Physics Class) in 2006 and of IVA, the Royal Swedish Academy of Engineering Sciences in 2007. In 2008, he was named "Einstein Professor" by the Chinese Academy of Sciences. In 2013, he was awarded the IUVSTA Prize for Science for Triennium 2010-2013 and in 2014 the Fred Kavli Distinguished Lectureship in Nanoscience. In 2018, he was awarded the Wilhelm Westrup Prize for basic materials science leading to the creation of commercial value. In 2022 Lars Samuelson was awarded the highest engineering science prize from the Royal Swedish Academy of Engineering Sciences, the Great Gold Medal, “for his internationally outstanding contributions as a pioneering researcher and research leader in nanoscience and nanotechnology and for the exploitation of scientific results, particularly in the field of semiconductor technology”. In 2023 Lars Samuelson was elected “Foreign Member of the Chinese Academy of Sciences, CAS”. Lars Samuelson is the founder and chief scientist of four start-ups working on the commercialization of nanowire and nanomaterial technologies, in QuNano AB, GLO AB, Sol Voltaics AB and Hexagem AB. Samuelson is the author of well over 700 articles with h-index 91 at Web-of-Science (h-index 108 according to Google Scholar), and listed among the 1% most highly cited researchers by Web-of-Science, and has given >300 plenary/invited talks at international conferences.
Abstract:A nanoscience approach to materials physics and related applications provides a new tool-box by which completely new low-dimensional heterostructure materials and devices can be designed and created, often such incorporating quantum structures as active design parts. Nanowires are quasi-one-dimensional semiconductors which may be formed via bottom-up epitaxial methods providing ideal axial as well as radial heterostructures, thus enabling unique structures for nanoelectronics and nanophotonics applications.Huge efforts are made to realize microLEDs for advanced Augmented Reality (AR) displays, requiring microLEDs in the size range < 2 µm. III-Nitride based LEDs based on InGaN active layers on GaN are fine for the Blue & Green emitting LEDs, bur, the large lattice mis-match between Red-emitting active layers, containing at least 35% In, and the GaN substrate limits the efficiencies to very low values. The use GaAs based (GaAs/AlInGaP) devices for the Red fails for LEDs < 50μm and, in general, top-down processing kills the efficiencies of very small devices.We have been developing a very different and unique approach by replacing the substrate of GaN with a relaxed and dislocation-free c-oriented substrate of InGaN having In-concentrations of about 20%. By this, the lattice mis-match for Red-emitting quantum wells becomes similar as for very efficient Blue QWs on GaN. I will report how we use bottom-up crystal growth, with methods inhereted from seeding of GaN nanowires, resulting in extended platelets of InGaN freely separated from the GaN substrate and the growth mask. On top of these platelets we form the entire micro/nanoLED structure giving us IQE-values of about 60%, for lateral device sizes of < 1 µm – an example where basic materials physics enables real-world AR-display applications.