Conference Introduction

With the advent of 5G era, the demand for high frequency, high temperature, high power, high energy efficiency, harsh environment resistance and miniaturized power semiconductor devices is increasing rapidly. At the same time, with the increase of base station channel number and communication radio frequency, MEMS (Micro-Electro-Mechanical System) is one of the related technologies for this trend.  The 12th China International Nanotechnology Industry Expo will be held in Suzhou, Jiangsu Province from October 27th to 29th, 2021. Among the many symposiums, the one on the key technologies and processes of compound semiconductors and piezoelectric thin film devices will be sponsored by the Bureau of Personnel Chinese Academy of Sciences, Jiangsu Nanotech Industry Innovation & Development Center, and organized by Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS. The symposium will invite well-known nanotechnology professionals from universities, research institutes and enterprises to teach relevant knowledge, especially on the processing, testing and analysis of compound semiconductor power electronic devices and AlN MEMS devices. This symposium is intended to provide an opportunity for communication in the related research and development fields.

Conference Introduction


Organized by

    • Personnel Bureau of Chinese Academy of Sciences

    • Jiangsu nanotechnology industry innovation center
    • Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS
    • Suzhou Nano Technology Development Co., Ltd.

Main topics

Main topics

Topics discussed at this meeting included but are not limited to:

2023 Agenda arrangement

Date: Nov.18-Nov.19, 2022
Location: Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS
Ji Dong (The Chinese University of Hong Kong, Shenzhen, Assistant Professor)
The Progress Made in Vertical GaN Power Technology

      Biography: Dong Ji is currently working as an Assistant Professor in the Chinese University of Hong Kong, Shenzhen. Before he joined the faculty, he held a position of Silicon Architecture Engineer in Intel Santa Clara. He received his Ph.D. from the University of California Davis in 2017. His research work focuses on wide bandgap semiconductors, primarily on gallium nitride (GaN), for power, RF, and photonics applications. He served as the key researcher the “Strategies for Wide Bandgap, Inexpensive Transistors for Controlling High-Efficiency Systems” project supported by the US Department of Energy, delivering 1200V-class power switches based on GaN. He has authored/co-authored over 50 journal articles, conference proceedings, and book chapters. Dr. Ji received Anil Jain Memorial Prize for Best Dissertation from UC Davis, the Chinese Government Award for Outstanding Self-Financed Oversea Students from China Scholarship Council, the Fearless recognition award from Intel NSG, and the site recognition award from Intel Fab68.  

      Abstract: Silicon-based devices have served the semiconductor industry for more than 60 years. The device performances are approaching the fundamental material limits. Now with the continued emergence of advanced electronics systems, such as 5G, the internet of things, quantum computing, and electrical vehicles, silicon cannot fulfill the increasing requirements of high-efficiency and high-frequency. Now is the time to reshape the topic of electronic devices using more advanced semiconductors. Wide bandgap semiconductors, such as gallium nitride (GaN) and silicon carbide (SiC), have higher electron velocity, higher breakdown electric field strength, and higher operating temperature limit, all of which make them promising candidates in the upcoming era of greener electronics. In the past 20 years, GaN has shown excellent performances in solid-state lighting (blue LED), RF and power devices, where the GaN films are grown on foreign substrates, such as Si and sapphire. The foreign substrates reduce the cost significantly, however, they also impact the device performance and reliability. Since 2013, both governments and industry have invested heavily in GaN homogeneous growth techniques, making new device architectures and processes available. Most notably, vertical GaN power devices are being developed, which show great potential in power switches. In this talk, I will review the status of vertical GaN power technology.

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