Conference Introduction

With the advent of cutting-edge technologies like 5G mobile communications, big data analytics, and artificial intelligence in recent years, the integration of new display technologies with ultra-high-definition video, flexible, sensing, printed electronics, etc. has led to a burgeoning trend where new display technologies are blossoming and rapidly evolving through generational upgrade. The Forum on Key Technologies and Processes in New Display Devices will be co-sponsored by the Bureau of Personnel, CAS, and organized by the Nano-Fabrication Facility at Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS and Nanopolis Suzhou Co., Ltd. The Forum will be held at the Suzhou International Expo Centre from October 23rd to 25th, 2024.

The Forum invites renowned experts specialized in display technologies from universities, research institutes, and enterprises to share their professional knowledge, thoroughly analyze the key points and trends in the industry. Both theoretical training and technical discussion will be held. This Forum is intended to provide an opportunity for relevant personnel in the field to learn and communicate. It is free to attend with limited participants. We welcome college students, R&D engineers and scientific researchers to register and participate.

Conference Introduction


Organized by

    • Bureau of Personnel, CAS

    • Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS

    • Nanopolis Suzhou Co., Ltd

Main topics

Main topics

Topics discussed at this meeting included but are not limited to:

2023 Agenda arrangement

Date: Nov.18-Nov.19, 2022
Location: Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS
Ji Dong (The Chinese University of Hong Kong, Shenzhen, Assistant Professor)
The Progress Made in Vertical GaN Power Technology

      Biography: Dong Ji is currently working as an Assistant Professor in the Chinese University of Hong Kong, Shenzhen. Before he joined the faculty, he held a position of Silicon Architecture Engineer in Intel Santa Clara. He received his Ph.D. from the University of California Davis in 2017. His research work focuses on wide bandgap semiconductors, primarily on gallium nitride (GaN), for power, RF, and photonics applications. He served as the key researcher the “Strategies for Wide Bandgap, Inexpensive Transistors for Controlling High-Efficiency Systems” project supported by the US Department of Energy, delivering 1200V-class power switches based on GaN. He has authored/co-authored over 50 journal articles, conference proceedings, and book chapters. Dr. Ji received Anil Jain Memorial Prize for Best Dissertation from UC Davis, the Chinese Government Award for Outstanding Self-Financed Oversea Students from China Scholarship Council, the Fearless recognition award from Intel NSG, and the site recognition award from Intel Fab68.  

      Abstract: Silicon-based devices have served the semiconductor industry for more than 60 years. The device performances are approaching the fundamental material limits. Now with the continued emergence of advanced electronics systems, such as 5G, the internet of things, quantum computing, and electrical vehicles, silicon cannot fulfill the increasing requirements of high-efficiency and high-frequency. Now is the time to reshape the topic of electronic devices using more advanced semiconductors. Wide bandgap semiconductors, such as gallium nitride (GaN) and silicon carbide (SiC), have higher electron velocity, higher breakdown electric field strength, and higher operating temperature limit, all of which make them promising candidates in the upcoming era of greener electronics. In the past 20 years, GaN has shown excellent performances in solid-state lighting (blue LED), RF and power devices, where the GaN films are grown on foreign substrates, such as Si and sapphire. The foreign substrates reduce the cost significantly, however, they also impact the device performance and reliability. Since 2013, both governments and industry have invested heavily in GaN homogeneous growth techniques, making new device architectures and processes available. Most notably, vertical GaN power devices are being developed, which show great potential in power switches. In this talk, I will review the status of vertical GaN power technology.

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